Hot-Phonon Effect on the Reliability of GaN-Based Heterostructure Field-Effect Transistors
نویسندگان
چکیده
GaN-based high electron mobility transistors (HEMTs) are among the most promising devices for high power radio frequency (RF)/microwave (MW) and switching applications owing to their high breakdown voltage, high electron density, and high electron saturation velocity.[1,2] In fact, GaN HEMTs are currently employed in RF/MW high power amplifiers, low-noise amplifiers (LNA), and RF switching modules in radar and electronic warfare (EW) systems.[3]However, reliability is still an issue to be addressed since GaN-based technology has not reached its maturity yet. Hence, addressing physical mechanism behind relatively poor reliability of GaN-based crystal structure is imperative along with the empirical analyses of conventional reliability data collected from device tests such as accelerated life tests. The Joule heating is considered as main culprit that accelerates degradation of power devices. The mechanism simply relies on that energy of the electrons increase due to the high electric field and dissipate it through electron– phonon scattering. Since hot electrons do not cool down through the interaction with acoustic phonons, emission of optical phonons dominates the phonon population at elevated power levels. Therefore, emitted optical phonons accumulate, and hot-phonon effects become significant in the GaN crystal structure especially around the channel.
منابع مشابه
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
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